| 摘要 |
PURPOSE:To obtain a semiconductor device that can select and connect any resistor formed in a substrate to a wiring layer without restrition due to a first layer of Al wiring by a method wherein a contact layer containing high melting point metal silicide is formed in connection to the resistor, and the resistor and a wiring layer are connected through the contact layer. CONSTITUTION:Enen when a first layer of Al wiring 8 is interconnected in what manner according to the design criterion, because an MoSi2 wiring 11 as a contact layer connected to a diffusion resistor 7 is formed under an interlayer insulating film 12, the degree of freedom of construction of a semiconductor device is enhanced with out limited by the wiring pitch of the first layer of Al wiring 8 and length of the diffusion resistor 7. Accordingly at a gate array and the like the slicing process is started at time when a resistance contact to the diffusion resistor 7 thereof is to be formed, and connection to the diffusion resistor 7 having the proper resistance value can be attained. Moreover even when the working electric power source voltage is changed, resistance to decide logic amplitude can be selected at the slicing process.
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