| 摘要 |
PURPOSE:To easily obtain a film having high accuracy in thickness by chemical conversion treatment by preheating a metal to a temp. close to the chemical conversion treatment temp. CONSTITUTION:A semiconductor wafer 1 having metallic wiring of an Al-Si alloy or the like on a substrate of Si or the like is vertically fixed in a basket 2 and the basket 2 is moved to a preheater 9 over a soln. 7 for chemical conversion treatment heated beforehand to a prescribed temp. with heaters 5. The wafer 1 is then preheated to a proper temp. with the preheater 9 and the basket 2 is moved so that the wafer 1 is completely immersed in the soln. 7. After treatment is carried out for a prescribed time, the basket 2 is pulled up from the soln. 7 and dried. The metal is preferably preheated to a temp. nearly equal to the prescribed temp. of the soln. 7. The metal is preferably a passive metal such as Al, Ni, Ti, Co, Ta or Nb or an alloy thereof.
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