| 摘要 |
PURPOSE:To reduce the size of the isolation region of an element as well as to contrive improvement in the degree of integration of an integrated circuit by a method wherein a silicon film is grown on the inner wall of the groove formed on a semiconductor substrate, and an insulating film is formed on the inner wall of the groove by oxidizing said silicon film. CONSTITUTION:An n<+> type buried layer 2, an n type epitaxial layer 3, a field insulating film 4 and an oxide Si film 5 are formed on a p<-> type semiconductor substrate 1, and the film 5 is used as the base film of a silicon nitride film 6. Apertures 7 and 9 are formed on the layer 3 using said films 5 and 6 as an etching mark, a groove 8 is formed on the substrate 1, and a groove 10 is formed on the layer 3. A polycrystalline Si film 13 is formed on the whole surface of the substrate 1 and on the inner wall of the grooves 8 and 10. An insulating film 14 is formed by oxidizing the film 13, and a p type channel stopper region 12 is provided on the lower part of the groove 8. As a result, the element isolated region of a semiconductor device can be made small in size, and the degree of integration of an integrated circuit can also be improved.
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