| 摘要 |
PURPOSE:To prevent blooming phenomena from occurring by a method wherein crystalline damage layers formed by ion implantation are provided below electric charge transfer elements and an isolation region. CONSTITUTION:A solid-state image sensor is formed on an n type semiconductor wafer. Therefore, a substrate is provided with an n layer 1 on the bottom and a p<->layer 2 formed thereon while various elements forming the solid-state image sensor are formed in the layer 2. Another n layer 3 formed on the upper part of layer 2 is formed into a photodiode together with the p<->layer formed immediately below the n layer 3 while p<+>layers 4, 5 are formed on the peripheral side parts of photodiode. The layers 4, 5 are respectively formed into an isolation region and a gate. Furthermore, crystalline damage layers 7 are provided below the layers 4 and 5. In such a constitution, these layers 7 prevent the surplus charge generated while the layer 5 prevents charges generated by the photodiode from being transferred to a CCD channel from leaking out so that blooming phenomena may be prevented from occurring. |
