| 摘要 |
PURPOSE:To accurately control the shape of a protruded pattern as well as to easily control a single crystal element region by a method wherein the upper part region of the title semiconductor device is insulated from the lowler part region by selectively performing an etching on a semiconductor substrate. CONSTITUTION:An SiO2 film 2, an Si3N4 film 3 and a photoresist film 4 are formed on a single crystal Si substrate 1, and the surface of the substrate 1 is selectively exposed by performing a photoetching. Then, using the film 4 as a mask, a PIP treatment is performed on the substrate 1 using the prescribed gas, and after the film 4 has been removed, single crystal element regions 6 are independently formed by performing a thermal oxidization. The depth of said element regions 6 is set at about 1mum, the space between the element regions 6 is filled up with polycrystalline SiO2 and the like, and a flattening treatment is performed. The lower region is insulated from the upper region, and the shape of a protruded pattern is controlled accurately.
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