| 摘要 |
PURPOSE:To reduce the dispersion of thickness and a composition, and to obtain a crystal uniformly with excellent reproducibility extending over a large area by previously bringing into contact and mixing two kinds or more of the same element reaction gases, introducing the gases and growing three elements or more of mixed crystal semiconductors. CONSTITUTION:When trimethyl Ga and ((CH3)3Ga)TMG22 are used as an organic Ga compound, trimethyl Al ((CH3)3Al)TMA23 as an organic Al compound and arsine AsH35 as a V group gas and AlGaAs is grown in an epitaxial manner, TMG22' and TMA23 are mixed previously in a gas mixer 8 in response to a desired composition, and caused beforehand to flow through a bend line 24. When GaAs is grown, TMG22 and AsH35 are employed. When Al0.3Ga0.7As is grown, the temperatures of bubbler vessels for TMG22' and TMA23 are each brought to -15 deg.C and 20 deg.C, hydrogen is permitted respectively to flow at 10cc/min and 3cc/min, and bubbled, and a mixed gas uniformly mixed in the gas mixer 8 is introduced to a raw-material gas introducing line.
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