| 摘要 |
PURPOSE:To easily obtain the high resistance value of a high resistance element and to perform the miniaturization of the element by bonding a polysilicon layer of high specific resistance having a predetermined pattern, and bonding a silicide layer having a desired conductor pattern thereon. CONSTITUTION:A polysilicon layer 3 which does not contain an impurity of desired pattern or contains an impurity in a low impurity density is bonded on an insulating film 2 on a semiconductor substrate 1. Then, a silicide layer 6 is formed on a portion to become a conductor on the layer 3 to form a high resistance element of the layer 3 between the conductors. For example, the layer 3 is bonded to the entire surface on the film 2 on the substrate 1, a refractory metal layer 4 for forming the layer 6 is bonded thereon, and the layers 3, 4 are formed in a pattern which contains a desired conductor and resistor. Then, after the layer 4 of the region to become a high resistance element 7 is removed, it is heat treated to compound the silicon with the layer 4 to form the layer 6. |
