| 摘要 |
PURPOSE:To monitor the quality of a sputtered thin film with a conventional sputtering device for producing semiconductors by newly using a spectroscope and photoelectron photomultiplier tube and photoanalyzing the emitted light from the plasma formed in the stage of sputtering. CONSTITUTION:The spectroscope 13, the photomultiplier tube 14, a preamplifier 15, an amplifier 16, a pulse height discriminator 17 and a microcomputer 18 are connected to the sputtering device 10 for producing semiconductors. The emitted light from the plasma region formed in the sputtering by the sputtering device 10 is passed through quartz glass 11 and is made incident on the spectroscope 13 by a condenser lens 12 made of quartz glass to separate the light into its spectral components. The separated and emitted light is detected by the photomultiplier tube 14 and thereafter the electron signal thereof is immediately subjected to impedance matching and power amplification by the preamplifier 15 and is further amplified by the amplifier 15. After the signal components are discriminated by the pulse height discriminator 17, the signal components are counted by the microcomputer 18.
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