| 摘要 |
PURPOSE:To accelerate an MOSFET by forming impurity regions in portions which become source.drain and gate regions on a substrate, selectively removing the impurity region of the portion which becomes the gate region, and forming a gate electrode in its groove, thereby using a low melting point metal electrode. CONSTITUTION:A groove 12 is formed on one main surface of a substrate 11, and an insulator is buried to form a separating layer 14 between elements. Then, impurity ions 17 are implanted, for example, through an SiO2 film 16 on the entire surface over the source, drain and gate regions of regions 15 to be formed with an MOSFET, and heat treated to be activated to form an impurity region 18. Then, it is selectively etched to form a groove 19, and the region 18 is used for a source region 20 and a drain region 21. Then, a gate insulating film 22 is formed in the groove 19, the entire surface is covered with an aluminum layer, and removed by etching until the aluminum layers corresponding to the regions 20, 21 are eliminated. An aluminum gate electrode 23 is formed in the groove 19.
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