| 摘要 |
PURPOSE:To improve the yield of manufacturing a semiconductor device by providing the same as or similar thermal expansion coefficient to that of a wiring electrode film in an interlayer insulating film to reduce the contacting area of the interlayer film with the electrode film via a plurality of holes formed in the inter layer film and reducing a stress generated at or after passing heat treating step, thereby preventing the wiring electrode film from being disconnected. CONSTITUTION:After an aluminum film is formed as a lower layer wiring electrode film 4, a plasma silicon nitride film is grown as an interlayer film 3. Thereafter, a hole having 1mum or smaller of diameter, the same length as or shorter length than the thickness of the plasma silicon nitride film is formed by emitting a finely reduced ion beam or laser beam. Then, an upper layer wiring electrode film 2 is formed, and the title device is formed through a normal semiconductor manufacturing process. Similar effect can be also obtained by filling one or more types of impurity ions in the hole formed in this manner.
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