发明名称 |
Semiconductor device having a vertical channel and method of manufacturing same |
摘要 |
A semiconductor device having a vertical channel capable of reducing the interface contact resistance between a gate electrode surrounding an active pillar and a word line connecting the gate electrode and a method of manufacturing the same is provided. The semiconductor device includes a plurality of active pillars extending in a direction perpendicular to a surface of a semiconductor substrate. A word line structure is formed on an outer periphery for connecting the active pillars disposed in the same row or column. Top and bottom source/drain regions are formed over and under the active pillars, respectively, in relation to the word line structure.
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申请公布号 |
US2007181925(A1) |
申请公布日期 |
2007.08.09 |
申请号 |
US20070702601 |
申请日期 |
2007.02.06 |
申请人 |
YOON JAE-MAN;KIM BONG-SOO;SEO HYEOUNG-WON;LEE KANG-YOON |
发明人 |
YOON JAE-MAN;KIM BONG-SOO;SEO HYEOUNG-WON;LEE KANG-YOON |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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地址 |
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