| 摘要 |
PURPOSE:To stably connect wirings with a diffused layer in a semiconductor device by so forming a second insulating film formed by anisotropically etching on the side of a contact hole that the upper portion is thin and the lower portion is thick to form a taper in the hole, thereby eliminating the formation of an extremely thin portion or a disconnected portion at metal wiring depositing time. CONSTITUTION:An insulating film 1 is grown on a diffused layer 3 formed on a substrate 5, a contact hole is formed by anisotropically etching, a second insulating film 6 is grown by a CVD method on the hole, and removed by anisotropically etching. Then, a CVD film remains only on the sidewall of the contact. When wirings 2 are formed thereon, a contact corresponding to miniaturization is obtained. Thus, since a taper is formed at the CVD film without requiring an excess masking step from the edge to the bottom of the contact, the thickness of the deposited film necessary for wirings is obtained also on the sidewall of the hole to suppress the disconnection of the deposited film which feasibly occurs at the edge of the contact, thereby forming the contact without increasing the area of the hole. Accordingly, a miniaturization for raising the integration of a semiconductor device can be performed.
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