| 摘要 |
PURPOSE:To enable a boundary layer, which is uniform in thickness, to be formed over a wide range on a substrate, by extending a susceptor supporting bed with respective given lengths in the directions of upstream and downstream sides of a reaction gas against a substrate-set position so that is formed with the same angle as that of susceptor inclination. CONSTITUTION:A susceptor 12 made of plate graphite, on which a semiconductor substrate 11 of compound such as CdTe is mounted, is buried in a susceptor supporting bed 13 so that the surface of this susceptor 12 has the same angle thetaas that of the surface of the susceptor supporting bed 13. And, the susceptor supporting bed 13 is extended as for as l and l' from upstream and downstream end parts 12A and 12B of the susceptor 12 respectively against a gaseous flow shown using an arrow B. Thus, without a rapid change in the gaseous flow occurring on the gaseous upstream side end part 11A and downstream one 11B of the substrate 11, a boundary layer 14, which is uniform in thickness (t), can be formed over a wide range on the substrate 11.
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