| 摘要 |
PURPOSE:To prevent channeling on ion implantation, and to obviate the deterioration of transistor characteristics by forming an oxidation-resistant film on a first conductive layer as a gate electrode, nitriding the peripheral side wall of a gate-electrode pattern and shaping a nitride film. CONSTITUTION:A nitride film 5 and polysilicon 4 are etched in succession through an RIE method, using a resist pattern 6 as a mask, thus forming a gate-electrode pattern 4'. The gate-electrode pattern 4' is nitrified directly to shape a nitride film 8 on the peripheral side surface of the gate-electrode pattern 4'. Polysilicon is deposited on the whole surface of a substrate, a spacer 9 is formed on the peripheral side surfaces of gate-electrode patterns 4', 5' through etching corresponding to film thickness, and the spacer 9 is oxidized completely, thus shaping an oxide-film spacer 10. Arsenic ions are implanted to form n<+> regions 111, 112, an interlayer insulating film 14 is deposited, and melting and heat treatment are conducted and contact boles are bored and metallic wirings 15 are shaped, thus forming an n channel MOS transistor.
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