发明名称 LEAD FRAME MATERIAL FOR SEMICONDUCTOR
摘要 PURPOSE:To obtain a lead frame material which has an adquate strength and also, is superior in bending processability, wire-bonding characteristic and so on by a method wherein the surface layer and the central part side of the lead frame material are each constituted of a material different in composition and also, the surface layer is formed in such a way that the softening temperature of the material of the surface layer becomes lower than that of the material of the central part side. CONSTITUTION:A lead frame material is formed in a two-layer structure of a central part side and a surface layer and the surface layer is constituted in such a way as to be easy to soften faster than the central layer. this lead material can be manufacture by clading or an alloying treatment through surface diffusion, such as a method wherein the surface of a certain metal is coated with a metal of a composition different from that of the metal by plating, evaporation, ion-implantation and so on and this is subjected to a diffused heating. Thereby, the generation of abnormality in the surface due to bending is prevented and the wirebonding characteristic can be improve.
申请公布号 JPS62242344(A) 申请公布日期 1987.10.22
申请号 JP19860085291 申请日期 1986.04.14
申请人 HITACHI CABLE LTD 发明人 SASAKI HAJIME;ABE HAJIME;SEKI KUNIAKI;NISHIYAMA SHINICHI
分类号 H01L23/50;B32B5/14;H01L23/495 主分类号 H01L23/50
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