| 摘要 |
PURPOSE:To reduce the generation of a stress in a support element of a semiconductor crystal substrate bonded with low-melting glass aud in the bonded surface thereof, and thereby to prevent the occurrence and growth of minute cracks in a low-melting glass layer, by interposing a bonding layer formed of the low-melting glass between the support element and a pedestal, and by patterning the bonding layer with a plurality of concentric circles. CONSTITUTION:A bonding layer 6 formed of low-melting glass is interposed between a support element 4 and a pedestal 5, and a plurality of concentric circles are patterned in the layer. The bonding layer 6 is formed by mixing low-melting glass powder in the vehicle having prescribed viscosity and by applying the mixture on the bonded surface of the pedestal 5 by screen printing, and it is preferable that a pattern of concentric circles is provided in the vicinity of the joint of the the pedestal 5 and a cavity 2 forming an airtight chamber. Since the bonding layer 6 bonding the support element 4 and the pedestal 5 is very thin, the disadvantage generation of a stress in the bonded area can be reduced to the utmost, and since the bonding layer 6 is patterned with a plurality of concentric circles, the growth of cracks in the bonding layer 6 of low-melting glass can be prevented completely, even if they should occur therein.
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