| 摘要 |
PURPOSE:To improve stabilization and reliability, by first forming contact holes and then removing the projecting parts of the interlayer insulating film to realize high integrity when the contact holes are formed on a flattened interlayer insulating film. CONSTITUTION:A semiconductor element composed of n<+> diffusion layers 102 and 103, and a gate electrode 104, is formed on a semiconductor substrate 101, and then a silicon dioxide film 105 and contact holes 106A are formed. Then, aluminium interconnection 107 is formed. After formation of an interlayer insulat ing film 108, contact holes 110B are formed, with the interlayer insulating film being coated with photoresists 109. And, the interlayer insulation 108 and the photoresist 109 are etched at the same speeds, to remove the photoresists left on the contact holes B. Finally, aluminium interconnection 111 is formed to complete a semiconductor device.
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