Temperature detector.

摘要

A temperature detector comprising a semiconductor layer made of a p-type or n-type semiconductor material doped with an impurity. Said layer is either completely amorphous or substantially amorphous, in which case it contains microcrysta1s. The temperature detector has good sensitivity at a temperature of not more than 100 K in comparison to conventional temperature detectors, and shows good linearity concerning its change in resistivity upon changes in temperature over a wide temperature range.