| 摘要 |
<p>A dense, sintered ceramic material having a low dielectric constant and a low coefficient of thermal expansion is provided from a mixture of 10-50 wt. % alumina, 0-30 wt. % fused silica, and 50-60 wt.% of a frit comprised of CaO, MgO, Al2O3, B2O3, and SiO2. The mixture has a minimum sintering temperature in the range of 850-1000 DEG C, and can be formed by conventional manufacturing techniques. It is particularly useful for the fabrication of single of multilayer electronic circuit substrates.</p> |
