Semiconductor memory and method for fabricating the same.

摘要

In a semiconductor memory a capacitor (1) is formed by utilizing a groove (17) formed in a semiconductor substrate (10). The sidewalls of the groove are covered by an insulating layer consisting of a first (18) and a second (19) insulating film. The interior of the groove is filled with conductive material. An area occupied by each memory cell can be made very small and a distance between the memory cells can also be made very small, accordingly, high denisty integration is facilitated.