SOLID-STATE IMAGE SENSING DEVICE

摘要

PURPOSE:To contrive the restraint of blooming by providing a second region in a charge storing region and providing a Schottky electrode in said second region in order to discharge surplus charges. CONSTITUTION:An N-type region 4 is formed in a charge storing region of a P-type semiconductor substrate 1 and a Schottky junction electrode 7 is ar ranged in said N-type region 4 to form a Schottky barrier diode. A potential of the electrode 7 is determined so that said Schottky barrier becomes slightly lower than other barriers. As a result, surplus electrons flow out to the electrode 7 side as a forward current to the Schottky barrier diode when electrons are stored in the charge storing region, and overflow to other storing regions can be prevented.