| 摘要 |
PURPOSE:To reduce the leakage of magnetic flux generated from the semiconductor and the wiring in a stack by covering the semiconductor stack consisting of a GTO thyristor, a free foil diode and a cooling fin with a small electric resistance nonmagnetic material. CONSTITUTION:A semiconductor stack 19 is formed by laminating a required number of GTO thyristors 8, 9, tree foil diodes 9, 10 and a cooling fin 23. A shield case 21 is made of aluminum or copper to cover all the surface of the stack 19 and a wiring 22 except a bushing tor connection. This reduces the leakage of magnetic flux generated from the semiconductor and the wiring 22 in the stack 19. |
