发明名称 |
Gate array type semiconductor integrated circuit device |
摘要 |
A gate array type semiconductor device including at least a plurality of basic cell arrays and diffusion regions for suppressing latchup in the basic cells forming the basic cell arrays. Each of the diffusion regions has a comb-shaped structure, i.e., wide tooth parts, narrow tooth parts, and a base part, formed as an integral structure. These parts partially surround each basic cell.
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申请公布号 |
US4701777(A) |
申请公布日期 |
1987.10.20 |
申请号 |
US19860948406 |
申请日期 |
1986.12.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKAYAMA, YOSHIHISA;FUJII, SHIGERU;TANABE, TOMOAKI |
分类号 |
H01L27/08;H01L21/82;H01L21/8234;H01L27/088;H01L27/092;H01L27/118;(IPC1-7):H01L27/02;G11C5/02;H01L27/10;H01L27/15 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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