| 摘要 |
PURPOSE:To form a smooth coating of high density of even grain size by a method wherein, after forming a metallic coating to be a growth nucleus by a sputtering process, another metallic coating is epitaxially grown on the former coating by a CVD process using an organic metal. CONSTITUTION:A substrate 7 to be grown is placed on a susceptor in a growth chamber 1 to be heated up by a heater 8. During the sputtering process, an Al target 9 for sputtering is placed above the substrate 7 to grow a sputter Al film as a growth nucleus on the substrate 7. Next, before starting epitaxial growth, the surface of sputter Al film is etched by a bias sputtering process. Finally, the target 9 is removed from the substrate, respective gases are led in from a raw gas leading-in port 4 and a hydrogen leading-in port, and the mixed gas of these two gases is applied to the substrate 7 to epitaxially grow the Al film thereon.
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