VITREOUS SEMICONDUCTOR SUPPORTING STRUCTURE AND DEVICE REALIZED WITH SUCH A STRUCTURE

摘要

The invention relates to a vitreous semiconductor supporting structure obtained by connecting semiconductor layers to a vitreous support constituted by at least two glasses. The semiconductor layers are constituted by at least an electrically and optically active n-ary III-V compound (3) and optionally complementary layers for passivation (4), index adaptation (6), and protection (7). The invention is remarkable in that in order to keep the said active layer in a compression state in order not to deteriorate its electrical properties, it uses at least two glasses, an intermediate glass (15) providing its thermoelastic properties and a supporting glass (16) providing its high softening temperature. The invention may have applications in devices such as photocathodes, charge transfer devices, etc.