摘要 |
PURPOSE:To detect independently a VBL one by one by discriminating the presence and absence of an information carrier with a tunnel current or a discharging current to occur by impressing the voltage between the device close to a prescribed information reading part in a magnetic thin film and the magnetic thin film and reading information. CONSTITUTION:A needle-shaped electrode 8 sharpened sharply from the external part of a magnetic thin film 10 to an information reading part 3 of one edge of a major line 2 is made close to the magnetic thin film 10 without limit, the voltage of about several volts and several tens of the volt is impressed between both, and then, a 'tunnel current' occurs. The size of the tunnel current, when an impressed voltage is constant, is changed by depending upon the work function of an inter-electrode distance, an electrode material and a magnetic thin film material. Thus, the difference in the work function due to the presence and absence of a vertical Bloch line (VBL) pair 6 and the lattice distortion through magnetostriction is sensitively reflected at the difference of the tunnel current and the presence and absence of the VBL pair 6 can be detected.
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