发明名称 THIN FILM FORMING DEVICE
摘要 PURPOSE:To efficiently form a high-performance thin film by irradiating an electron beam on a reactive gas which has been blown into the inner vessel of a vacuum vessel, and dissociating, exciting, and partly ionizing the reactive gas to promote the reaction. CONSTITUTION:The reactive gas 26 is introduced from a nozzle 16 into the inner vessel 21 in the vacuum vessel 11, and the gas pressure is controlled to 10<-4>-10<-3>Torr. A 10-100V voltage is impressed on an electron beam drawing electrode 17 from the first DC power source 24 to emit an electron from an electron beam emitting means 18 heated at about 2,000 deg.C by an AC power source 23 toward the electrode 17, and an electron beam of about 1-5A is emitted. The reactive gas 26 (gaseous hydrocarbon) is dissociated by the electrode 17 and the electron beam, and a part of free C and H are excited and ionized. Meanwhile, when specified voltage is impressed between accelerating electrodes 19 and 20 from the second DC power source 25, the ion is accelerated and reaches a substrate 22. At this time, the kinetic energy of the C ion and H ion to be injected on the substrate 22 can be controlled by changing the accelerating voltage, and the film quality can be controlled.
申请公布号 JPS62238364(A) 申请公布日期 1987.10.19
申请号 JP19860081161 申请日期 1986.04.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 ITO HIROMOTO;INA TERUO
分类号 C23C16/26;C23C16/27;C23C16/48;C23C16/50 主分类号 C23C16/26
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