| 摘要 |
PURPOSE:To form a contact diffused layer without stopping up a fine contact hole while sufficiently flattening the surface of a substrate by a method wherein the first and the second boron phosphorus silicide glass films are deposited on an insulating film deposited on the surface of a semiconductor device to be flattened by heat-treatment and then the contact hole is made to be heat- heated. CONSTITUTION:An oxide film 2, a gate oxide film 3, a polycrystalline silicon gate layer 4 and diffused layers 5 are formed on a silicon substrate 1 and then a silicon nitride film 6 is deposited on the overall surface of silicon substrate 1. Next, the first BSG film 7 in 2 weight % of boron concentration, 3 weight W of phosphorus concentration and 300 Angstrom in thickness is deposited on the silicon nitride film 6. Successively, the second BSG film 8 in 3 weight % of boron concentration, 5 weight % of phosphorus concentration and 500 Angstrom in thickness is deposited on the first BSG film 7 to be heat-treated for baking shrinkage, and flowing. Then, a contact hole is made by etching process using a photoresist as a mask for heat-treatment. Finally, after removing another oxide film formed on the exposed silicon surface during the heat-treatment, aluminium interconnections 9 are formed.
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