PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE:To obtain the titled highly uniform and high-quality compd. semiconductor single crystal by pulling a single crystal at a specified velocity while impressing a magnetic field on a raw material melt in a liq-sealed Czochralski method. CONSTITUTION:The raw material melt 15 and a liq. sealant 16 are charged in a crucible 13. A magnetic field having >=3,000Oe intensity is then impressed on the melt 15 by using a magnetic field impressing device 19. A seed crystal 17 is simultaneously brought into contact with the melt, and pulled up at the velocity of <=4mm/hr. A highly uniform and high-quality compd. semiconductor single crystal is thus obtained.