| 摘要 |
PURPOSE:To enhance performance of both input sensitivity and the limiting resolution by forming a transparent conductive film of more than 800Angstrom crystal size on a cesium iodide phosphor film vacuum evaporated in a specific film thickness. CONSTITUTION:A vacuum evaporated phosphor film 21 is formed by being subjected to vacuum evaporation under 6X10<-1> Pa in the ambience of Argon with the film thickness ranging from 280mum to 400mum in the central area. A vacuum evaporated phosphor film 22 is vacuum evaporated on the vacuum evaporated phosphor film 21 under high vacuum below 1X10<-3> Pa to form a film up to 20mum thickness. The temperature during formation of those vacuum evaporated phosphor films 21, 22 is maintained at 100 deg.C. Then, a transparent conductive film 23 made of indium tin-oxide with 2000Angstrom thickness is formed on the surface of the vacuum evaporated phosphor film. The average crystal size of this film 23 is 1450Angstrom . Thus, performance of both input sensitivity and the limiting resolution equivalent or superior to the conventional one can be achieved, in case of 300 to 500mum film thickness.
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