| 摘要 |
PURPOSE:To obtain a C-containing Al alloy for semiconductor wiring material in which occurrence of electromigration is prevented, by specifying a composition consisting of alloying elements such as Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, etc., C, and Al. CONSTITUTION:The C-containing Al alloy for semiconductor wiring material has a composition consisting of, by weight, 0.002-0.7% of one or more alloying elements among Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, etc., 0.002-0.5% C, and the balance Al with inevitable impurities and further containing, if necessary, 0.5-1.5% Si. In the above alloy, voids and hillocks can be prevented from occurring by preventing the occurrence of electromigration. The above C- containing Al alloy can be obtained by regulating respective amounts of high- purity Al or high-purity Al-Si alloy, high-purity AlC, and high-purity above- mentioned alloying elements into the prescribed composition and by subjecting the above to melting and casting in air.
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