| 摘要 |
PURPOSE:To enhance yield and reliability of semiconductor devices through improved etching precision by a method wherein an insulating film or a metal film is provided to cover a protecting film built of silicon nitride not involving a metal electrode forming region and then a wiring is formed out of the metal layer by means of photoresist-etching. CONSTITUTION:An insulating film 15 or metal film 15 is provided on a silicon nitride protecting film 12 covering a smiconductor substrate 11 except on a region for electrode formation and then wiring metal is patterned by photoresist- etching, for the formation of a metal electrode 13 on the silicon nitride protecting film 12. For example, after formation by vapor growth of a silicon oxide film on the silicon nitride protecting film 12 covering the semiconductor substrate 11, the silicon oxide film is removed from the region for electrode formation by photoresist-etching for the formation of the insulating film 15. Next, a metal, aluminum or the like, is attached to the entire surface by spattering or vapor growth, a photoresist film 14 is formed only on the region for electrode formation, and the photoresist film 14 serves as a mask in a process wherein the metal film is subjected to selective dry etching for the formation of a metal wiring electrode 13.
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