| 摘要 |
PURPOSE:To equalize the planar film thickness of the epitaxial layer to be grown on the surface of a substrate by a method wherein a rotating shaft sealing part is provided on a reaction tube through the intermediary of a bellows which is freely contracted and expanded in vertical direction, and a susceptor is brought in the state Wherein it is rotated in axial direction and that it performs a reciprocatory movement in vertical direction. CONSTITUTION:After a telescopic bellows 15 has been interposed between the bottom side of a reaction tube 11 and a rotating shaft scaling part 14, the susceptor holder 13 with which the pyramid type susceptor 12 is supported in a reaction tube 11 is picked up to the lower outside from the rotating shaft sealing part. For example, when an AlGaAs layer is going to be epitaxially grown on the surface of a GaAs substrate 12, first, said substrate is provided on the outer circumferential surface of the susceptor 12, it is heated up from outside the reaction tube 11, said susceptor 12 is rotatingly moved in axial direction at the rate of several rotations per minute by the external driving source through the intermediary of the susceptor holder 13, and also the suscetor 12 is reciprocatory moved in vertical direction. Under the above-mentioned condition, reaction gas is introduced into the reaction tube 11 using H2 carrier gas.Through the above-mentioned procedures, the temperature distribution of the susceptor 12 and the temperature distribution of the GaAs substrate 17 on the film-growing surface can be made uniform.
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