| 摘要 |
PURPOSE:To reduce mingling of phosphorus atoms into an I-type amorphous silicon semiconductor layer by a method wherein the concentration of the phosphorus atoms are gradually reduced in an N-type amorphous silicon semiconductor layer toward the I-type amorphous silicon semiconductor layer. CONSTITUTION:On a stainless steel substrate 7, an N-type amorphous silicon semiconductor layer 8 in which the phosphorus concentration is uniform, an I-type amorphous silicon semiconductor layer 10, an N-type amorphous silicon semiconductor layer 9 in which the phosphorus concentration is gradually re duced toward the I-type amorphous silicon semiconductor layer 10, a P-type amorphous silicon semiconductor layer 11, a transparent conductive film 12 made of tin-doped indium oxide and an Al electrode 13 are formed. The control of phosphorus atoms is carried out by the control of flow of phosphine gas, which is dopant gas, With this constitution, mingling of phosphorus into the I-type amorphous silicon semiconductor layer can be reduced and an internal electric field can be increased and optical deterioration can be avoided. |
