| 摘要 |
PURPOSE:To equalize treatment by providing a gas supply means supplying the upper surface of a sample with a treatment gas from the periphery of the sample, an exhaust system connected to a treating chamber and decompressing and evacuating the inside of the treating chamber and a gas exciting means exciting the treatment gas flowing on the upper surface of said sample. CONSTITUTION:A wafer 18 carried into a treating chamber 1 is placed on the upper surface of a sample base 5, a treatment gas is introduced into a gas disperser 8 from a gas introduing port 4, a cavity section in the gas disperser 8 is filled with the gas, and the gas is discharged from a gas blow-off port 20. The treatment gas discharged flows toward the center from the outside of the circumference on the upper surface of the wafer 18, is pushed up to an upper section by the treatment gas flowing from the periphery at the central section, and is discharged from an exhaust port 3 and the inside of the treating chamber 1 is held at a vacuum of predetermined pressure. When the wafer 18 is irradiated by laser beams 17, only the treatment gas in a section where laser beams 17 collide are excited, and etches the wafer 18. Accordingly, the treatment gas is fed from the periphery of a sample, thus equally performing treatment when the treatment gas is optically pumped and the sample is treated.
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