| 摘要 |
PURPOSE:To prevent electromigration and the formation of hillocks by constitut ing an Al alloy containing B and C of one kind or two kinds or more of alloying elements selected from a group consisting of Ti, etc., B, C and Al and unavoidable impurities. CONSTITUTION:An Al alloy containing B and C is organized of 0.002-0.7wt. % alloying elements of one kind or two kinds or more selected from a group composed of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W, 0.002-0.5 wt. % B, 0.002-0.5wt. % C and Al and unavoidable impurities as the remainder. An Al-Si alloy in which high purity (99.999 wt. %) Al or high purity (99.999 wt. %) Si is dissolved is used as the aluminum alloy for a semiconductor wiring material. One parts of Me, B and C are changed into MeBx and MeCx on casting in a target board prepared in this manner, a nuclear effect is generated, cast structure is fined while the uniformity of a thin-film by sputtering or vacuum deposition is improved, and the Al alloy precipitates to a grain boundary and effectively works for preventing voids by electromigration and the formation of hillocks.
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