Device including a radiation sensor.

摘要

Radiation-induced effects in layered structures of conductor and semiconductor materials are utilized in radiation-sensitive devices such as, e.g., highly linear as well as highly nonlinear position sensors. Such devices include a structure of alternating layers of conductor and semiconductor materials, and electrical contacts are provided between which a radiation-induced voltage appears. Among suitable layer materials are silicon and titanium, and resulting devices are sensitive to electromagnetic as well as to particle radiation.