| 摘要 |
PURPOSE:To increase etching speed to reduce a side etching, by performing a dry etching of an a film or Al alloy film by the use of a reactive gas which contains BCl3, SiCl4, Cacute angle2, O2, and fluorine. CONSTITUTION:A reactive gas is introduced between electrodes 2 aud 3 from a gas-introducing part 1. High frequency electric power generated by a high frequency power supply 5 is impressed between the electrodes 2 and 3. An Al film or Al alloy film on a processed matter 4, which is arranged on the electrode 3, is etched by the plasmic reactive gas. The reactive gas containing BC$;3, SiCl4, Cl2, O2, and fluorine is used then.Hence, an etching speed is increased to reduce a side etching.
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