| 摘要 |
PURPOSE:To oscillate a large light output in low threshold current, high efficiency oscillation and stable basic lateral mode by forming a layer structure comprising first, second clad layers interposed at both sides of an active layer, sequentially laminated third, fourth clad layers, a current block layer, a fifth clad layer so that the fifth layer is a current block layer to contact with the third layer through the groove of the fourth layer and specifying the thickness of the specific layer and the refractive indexes of the respective layers. CONSTITUTION:An n-type Al0.45Ga0.55EAs first clad layer 11, an undoped Al0.15 Ga0.85As active layer 12, a P-type Al0.45Ga0.55As second clad layer 13, a P-type Al0.36Ga0.64As third clad layer 14, an n-type Al0.5Ga0.5As fourth clad layer 15, and an n-type GaAs block layer 16 are sequentially grown by an MOCVD method on an n-type GaAs substrate 10. Then, the layers 16, 15 are etched to form striped grooves and to expose the layer 14. Then, a P-type Al0.4Ga0.5As fifth clad layer 17 and a P-type GaAs cap layer 18 are sequentially grown. Then, the thicknesses d2, d3 of the layers 13, 14 and the refractive indexes n1-n5 of the first-fifth clad layers have d2<d3, n1<n3, n2<n3, n4<n3, n4<n5 and n1-n5 are smaller than the refractive index of the active layer.
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