DIFFERENTIAL AMPLIFIER EMPLOYING N-TYPE CHANNEL INSULATED GATE FIELD EFFECT TRANSISTOR,申请号JP19870061411-传众专利搜索

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发明名称	DIFFERENTIAL AMPLIFIER EMPLOYING N-TYPE CHANNEL INSULATED GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPS62230207(A)	申请公布日期	1987.10.08
申请号	JP19870061411	申请日期	1987.03.18
申请人	DEUTSCHE ITT IND GMBH	发明人	PAURU OREARII
分类号	H03F1/32;H03F3/45	主分类号	H03F1/32
代理机构		代理人
主权项
地址

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