METHOD OF GROWING ADDED COMPOUND SEMICONDUCTOR CRYSTAL

摘要

PURPOSE:To enable a thin film with impurity in high concentration added thereto to be grown by a method wherein at least a part of material in vapor state containing impurity element is excited by microwave electron cyclotron resonance to plasma state to be carried to a substrate crystal through a divergent magnetic field. CONSTITUTION:Nixed gas of silane and arsine is led in from a gas leading-in port 7: trimethyl gallium is led from another gas leading-in port 6; microwaves are impressed through square waveguide 2; and microwave electron cyclotron resonance plasma is produced in a cavity resonance type plasma producing cheaper 5. Within the device, the magnetic field intensity is diminished from the cavity resonance type plasma producing chamber 5 to a growing chamber (divergent magnetic field) resultantly taking out the divergent plasma to be carried to a substrate crystal 8. Through these procedures, a thin film with impurity in high concentration added thereto is grown on the substrate.