发明名称 FORMING METHOD OF THICK FINE PATTERN
摘要 PURPOSE:To form a wiring pattern which has high wiring density by forming etching resists of the prescribed pattern on both side surface of a thin metal film, and performing the formation, removal and etching of a protective film in the prescribed sequence on both side surfaces. CONSTITUTION:Photoresists 5 for etching of the prescribed pattern are formed on both side surfaces A, B of a thin metal foil 4. A protective film 6 is formed on the surface B. Then, a photoetching is performed on the surface A to form a slot 10 up to the intermediate of the thickness of the foil. Then, the photoresist 5 on the surface A is removed, and a resin film 7 is formed. Thereafter, the film 6 on the surface B is removed, a slot 10' designated by a broken line is formed by photoetching, and connected to the bottom of the slot 10. Then, the photoresist 5 on the surface B is removed. Thus, the formation of the pattern having high wiring density can be facilitated, and is adapted for the formation of a thin coil.
申请公布号 JPS6026439(A) 申请公布日期 1985.02.09
申请号 JP19830135007 申请日期 1983.07.22
申请人 MATSUSHITA DENKI SANGYO KK 发明人 TANJI KATSUYA;OSHIMA NOBUYUKI;NAKAMURA HISASHI
分类号 H05K3/06;H01F5/00;H01F41/04;H02K15/04;H05K1/16;H05K3/00 主分类号 H05K3/06
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