| 摘要 |
PURPOSE:To manufacture a high power transistor etc. with wide safety operation region by a method wherein. within a semiconductor device wherein emitter contact electrode films directly bonded to an emitter layer are connected to an interconnection electrode film through the intermediary of stable resist layers (balast resistor), the stable resistor layers are formed of ruthenium oxide base material. CONSTITUTION:A P type base layer 2 and multiple N type isolated emitter layers 3 are provided on the main surface of an N type semiconductor substrate (collector layer) l and then an insulating film 4 is formed on the surface of substrate l. First, BaRuO3 as ruthenium oxide base material is formed on the insulating film 4 by conventional process such as CVD process etc. Second, multiple balast resistor layers 6 (stable resistor layer) in the specified dimensions are formed by the well-known photoetching process using resist etc. Finally, an emitter interconnection electrode film 7, a base electrode 8 and a collector electrode 9 connecting to the contact films 5 are provided through the intermediary of multiple emitter contact electrode films 5 directly bonded to the isolated emitter layers 3 and the balast resistor layers 6.
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