发明名称 X-RAY PROJECTION EXPOSURE DEVICE
摘要 PURPOSE:To form a highly precise pattern by composing the title device out of a diffraction board having a focusing ability to converge an incident X-ray with predetermined inclination on a point on a normal passing the center of its surface, an X-ray absorbing mask formed on said board, and an X-ray imaging element arranged on a focusing point of the diffraction board. CONSTITUTION:After an X-ray emitted from an X-ray source S is incident on a boarde, only the X-ray irradiating a mask M patterned on a mask board K is diffracted by a crystal lattice of the mask board K. Because the crystal lattice is cuved, the Xrays are converged on an X-ray imaging element F. Accordingly, the all diffracted X-rays on the points on the mask surface pass the imaging element effectively. An image of an X-ray mask is formed on a wafer W by the X-ray imaging element F. At that time, because an optical axis A is predetermined to be vertical to a surface of the mask K, the image formed on the wafer is a reduction of the X-ray mask. Then, reduction transfer of a mask pattern becomes possible and a highly precise pattern can be formd.
申请公布号 JPS62230022(A) 申请公布日期 1987.10.08
申请号 JP19860074695 申请日期 1986.03.31
申请人 SHIMADZU CORP 发明人 IWAHASHI KENJI
分类号 G21K1/06;G03F7/20;G21K3/00;H01L21/027 主分类号 G21K1/06
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