| 摘要 |
PURPOSE:To stabilize the device for a long term with a little aging and to enable the accurate measurement by using a sample piece having a pattern in which two lines having the same width and the same symmetrical side shape are arranged in parallel in a predetermined interval as a sample piece for size correcting. CONSTITUTION:Two sripe-form patterns 21 and 22 having the same width are arranged on a surface of a substrate 10 in parallel and in an interval of pitch size lP only. By measuring this pitch size lP, a lowering quantity of a base line SB due to irradiation with electron beams is cancelled by both edge parts and a constant measured value can be always obtained. Such a pattern having a 2-8 mum pitch is formed on a sample piece 10 for correction and it is attached on an edge part of a wafer chuck 40 arranged on an upper side of a stage 50 and closely to a wafer 30 to make a correction on the sample piece 10 periodically. The measurement of an object is performed based on this correction value. Accordingly, the highly accurate size measurement can be attained by controlling a measured value obtained on the sample piece 10.
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