| 摘要 |
PURPOSE:To form a uniform and specific deposited film with conserved energy by introducing a gaseous raw material into a film forming space to form an adsorbed layer on a substrate, then introducing the other raw material therein to form the deposited film and subjecting the substrate or film to thermal excitation. CONSTITUTION:Either raw material of the gaseous raw material for film formation or gaseous halogen oxidizing agent is introduced into the film forming space and is adsorbed on the surface of the substrate to form the adsorbed layer. The other material is then introduced therein to induce the surface reaction on the adsorbed layer to form the deposited layer. An electron beam accelerated and converged by using an electron gun 440, etc., is irradiated onto the substrate 418 to thermally excite the substrate or film from the growing side of the film during the film formation. The crystalline deposited film having the high quality and the excellent physical characteristics such as electrical, optical and semiconductor characteristics is efficiently formed by the above- mentioned method.
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