FORMATION OF SEMICONDUCTOR THIN FILM AND DEVICE THEREFOR

摘要

PURPOSE:To form a thin film combining excellent interfacial characteristics with step coverage by a method wherein the first thin film layer with excellent interfacial characteristics by ECR (microwave electron cyclotron resonance) plasma CVD and the second thin film with excellent step coverage by photo CVD process deposited on the first thin film layer are formed by lamination. CONSTITUTION:Plasma particles produced in an ECR plasma producing chamber 2 are rapidly led in the direction toward a substrate 4 along divergent magnetic field to form a film by ECR plasma CVD process on the substrate 4 reacting to reactive gas. Next, photo CVD process is started to form the second film. At this time, reactive gas (SiH4) mixed with another gas to be activated is led to a filming chamber through a gas changeover device 11 and a gas leading-in line 5. The rare gas such as Ar etc. led in through another leading-in line 6 is electron-cyclotron-reacted in the ECR plasma producing chamber 2 to irradiate the reactive gas in the filming chamber 1 with intensive excited light forming film on the substrate 4 by photoexciting CVD process. Finally, a shielding metallic mesh 16 is arranged to be supplied with potential by a voltage generator 17 for trapping ion particles.