| 摘要 |
PURPOSE:To decrease defects and enable ZnS, ZnSe and ZnSSe having high- grade crystallization to grow, by radiating Excimer laser light, of a specific value or less in wavelength, on a raw material gas and a substrate surface. CONSTITUTION:Excimer laser light of 350nm or less in wavelength is radiated on a raw material gas and a substrate surface in vapor growth of II-VI compound semiconductor in which organic metal compounds are used as group II and VI raw materials. Thus, decomposition of the raw material gas is promoted by light energy, and surface migration of reactive species is promoted by radiating the light on the substrate surface, so that a high-grade II-VI compound semiconductor film can be obtained. |
