| 摘要 |
PURPOSE:To obtain a small size protection device having high protection performance by providing particular 1st-5th semiconductor layers and 1st-2nd metal wires to the surface of a semiconductor substrate. CONSTITUTION:A 1st semiconductor layer 2 of a 2nd conductivity type is provided on the surface of a semiconductor substrate 1 of a 1st conductivity type and a second semiconductor layer 4 of the 1st conductivity type adjacent to the end part of the 1st semiconductor layer 2, a 3rd semiconductor layer 5 of the 1st conductivity type and a 4th semiconductor layer 6 of the 2nd conductivity type are provided further on the surface of said 2nd semiconductor layer 4. Moreover, a 5th semiconductor layer 7 of the 1st conductivity type is also provided to the surface of a substrate 1 except for the 1st conductor layer 2. Moreover, a 1st metal wire 10 connected to the 2nd semiconductor layer 4 and the 3rd semiconductor layer 5 and is also connected to the input terminal 14 of a semiconductor element and a 2nd metal wire 11 which is connected to the 4th semiconductor layer 6 and the 5th semiconductor to the 4th semiconductor layer 6 and the 5th semiconductor layer 7 and is also connected to the earth terminal of semiconductor element are provided. In this case, for example, the 2nd semiconductor layer 4, 1st semiconductor 2 and the substrate 1 form an NPN bipolar transistor 12 and the 3rd semiconductor layer 5 and 1st semiconductor layer 2 form a diode 13. |
