| 摘要 |
PURPOSE:To eliminate malfunction by forming a minor loop on a magnetic domain wall in the vicinity of a stripe magnetic domain in a form in which all bits are previously written by the VBL pair in a bit fixing high coercive force (or low mobility) magnetic film. CONSTITUTION:By energizing a pulse current of 200mA to a writing conductor, all the bit pairs VBL are written in the bit fixing garnet 2. At this time, the VBL pairs are simultaneously written through all the bits of an information carrying garnet. At this time, since the attraction force operates between the VBLs having different directions in the garnets 2 and 4 and the repulsive force operates between the VBLs having the same directions, the VBL pairs of the garnet are stably maintained by a magnetic mutual operation with the garnet 2. Then, the VBL pairs of the garnet 4 are sequentially transferred to a reading part, when the three VBLs are converged, the VBL of the information carrying garnet is erased by cutting the end part thereof. Thereafter, desired binary information is written in the garnet 4 and can be used as a memory element.
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